A power solution that’s smaller and increases performance
MEGA Electronics is pleased to announce the launch of GaN FET power supplies.
GaN FET v MOSFET
GaN FET = Gallium Nitride Technology
FET = Field effect transistor – a key semiconductor device
MOSFET: has a thin layer of silicone oxide (metal-on-silicon field-effect transistors).
GaN is already an established semiconductor material, employed extensively in LED lighting and increasingly important in wireless applications and power supplies. GaN characteristics, such as high-frequency operation, promote high performance while maintaining high efficiency.
GaN has important advantages over silicon for power supply switching because it offers lower losses at higher voltages. They offer power designers the opportunity to reduce the physical size of their solution by operating at higher switching frequencies while maintaining desired efficiencies for a very large range of input and output voltages
The new Gallium Nitride technology dramatically reduces the size of AC/DC power supplies while increasing the performance.
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